|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5249 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 600V(Min) *High Switching Speed APPLICATIONS *Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 600 V 600 V 7 V 3 A 6 A 1.5 A 35 W .cn mi e ICM Collector Current-Peak IB Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5249 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.2 V ICBO Collector Cutoff Current VCB= 600V ; IE= 0 100 A IEBO Emitter Cutoff Current VEB= 7V; IC= 0 100 A hFE DC Current Gain IC= 1A ; VCE= 4V COB Output Capacitance fT Current-Gain--Bandwidth Product Switching Times ton Turn-On Time w w scs .i w IE= 0; VCB= 10V; f= 1MHz IE= -0.3A ; VCE= 12V .cn mi e 20 40 50 pF 6 MHz 1.0 s tstg Storage Time IC= 1A; IB1= -IB2= 0.1A; VCC= 200V; RL= 200 19 s tf Fall Time 1.0 s isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SC5249 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |