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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5249
DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 600V(Min) *High Switching Speed
APPLICATIONS *Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
w w
scs .i w
600 V 600 V 7 V 3 A 6 A 1.5 A 35 W
.cn mi e
ICM
Collector Current-Peak
IB
Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature
PC
TJ
150
Tstg
Storage Temperature
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC5249
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA ; IB= 0
600
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
B
0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
B
1.2
V
ICBO
Collector Cutoff Current
VCB= 600V ; IE= 0
100
A
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
100
A
hFE
DC Current Gain
IC= 1A ; VCE= 4V
COB
Output Capacitance
fT
Current-Gain--Bandwidth Product
Switching Times
ton
Turn-On Time
w w
scs .i w
IE= 0; VCB= 10V; f= 1MHz
IE= -0.3A ; VCE= 12V
.cn mi e
20
40
50
pF
6
MHz
1.0
s
tstg
Storage Time
IC= 1A; IB1= -IB2= 0.1A; VCC= 200V; RL= 200
19
s
tf
Fall Time
1.0
s
isc Websitewww.iscsemi.cn
2


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